Indium-Arsenmetall InAs

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Indium-Arsenmetall InAs

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February 15, 2023

Kategorieverbindung: Halbleiter-Substrat

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Tags:

#Halbleiterwafer #Oblatensubstrat #gasb Substrat

Kurzfassung: Discover the high-performance Indium Arsenide (InAs) Single Crystal Monocrystal Semiconductor Substrate, ideal for infrared detectors, quantum dot technology, and high-speed electronics. Learn about its unique properties and applications in modern semiconductor and optoelectronic fields.

Verwandte Produktmerkmale:

Indium Arsenide (InAs) substrates are perfect for high-performance infrared detectors in mid and long-wavelength ranges.
Used in quantum dot technology for advanced optoelectronic devices like lasers and solar cells.
Excellent electron mobility makes InAs suitable for high-speed electronics and telecommunications.
Popular material for optoelectronic devices such as lasers and photodetectors due to its direct bandgap.
Superior thermoelectric properties enable use in thermoelectric generators and coolers.
Grown using liquid-sealed straight-drawing technology (LEC) for stable electrical performance.
Precise crystal orientation with deviation of only ±0.5° using X-ray directional instruments.
Chemically mechanically polished (CMP) for surface roughness <0.5nm, ready for immediate use.

FAQ:

Are you a trading company or manufacturer?

We are a trading company with a sapphire manufacturer as our supplier, specializing in semiconductor material wafers for various applications.
Wie lange ist Ihre Lieferzeit?

Die Lieferung dauert in der Regel 5-10 Tage, wenn die Ware vorrätig ist, oder 15-20 Tage, wenn sie produziert werden muss, abhängig von der Menge.
Do you provide samples? Are they free or extra?

Yes, we offer free samples, but the customer is responsible for the freight costs.
What are your payment terms?

For payments <=1000USD, 100% advance payment is required. For payments >=1000USD, 50% T/T in advance and the balance before shipment.