Name: 350 dick um 2 Zoll-einzelner Kristall InP-Halbleiter-Substrat Haupt
Uploaded: 2026-03-10CDT21:17:53-05:00
Duration: 5 s
Description: Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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350 dick um 2 Zoll-einzelner Kristall InP-Halbleiter-Substrat Haupt

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February 20, 2023

Stichwort: Halbleiter-Substrat

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Tags:

#Halbleiterwafer #Oblatensubstrat #gasb Substrat

Videobeschreibung:

Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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