350 dick um 2 Zoll-einzelner Kristall InP-Halbleiter-Substrat Haupt

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350 dick um 2 Zoll-einzelner Kristall InP-Halbleiter-Substrat Haupt

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February 20, 2023

Kategorieverbindung: Halbleiter-Substrat

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Tags:

#Halbleiterwafer #Oblatensubstrat #gasb Substrat

Kurzfassung: Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

Verwandte Produktmerkmale:

Crystal grown by liquid-sealed straight-drawing technology (LEC) for stable electrical performance.
Precise crystal orientation with deviation of only ±0.5° using X-ray directional instrument.
Polished by chemical mechanical polishing (CMP) technology for surface roughness <0.5nm.
Available in 2-inch, 3-inch, and 4-inch diameters with customizable specifications.
Geeignet für die Herstellung von Hochfrequenz-, Hochgeschwindigkeits- und Hochleistungs-Mikrowellengeräten.
Offers high electronic limit drift speed, good radiation resistance, and excellent heat conduction.
Can be doped with S+/Zn+/Fe+ for varied applications.
Packaged as 100 single or double side polished wafers for convenience.

FAQ:

Are you a trading company or manufacturer?

Shanghai Xinkehui New Materials Co. Ltd. is a trading company with close collaboration with manufacturers, providing high-quality semiconductor wafers for various applications.
Wie lange ist Ihre Lieferzeit?

Die Lieferzeit beträgt in der Regel 5-10 Tage, wenn die Ware vorrätig ist, oder 15-20 Tage, wenn sie produziert werden muss, abhängig von der benötigten Menge.
Do you provide samples? Is it free or extra?

Yes, we offer samples free of charge, but the customer is responsible for the freight costs.
What are your terms of payment?

For payments <= 1000 USD, 100% in advance. For payments >=1000 USD, 50% T/T in advance and the balance before shipment.