Kurzfassung: Discover the Silicon Carbide Trays SiC Wafers Tray Plate, designed for ICP etching and MOCVD susceptor applications. These trays feature ultra-high purity, wear resistance, and excellent thermal shock resistance, making them ideal for semiconductor industries. Learn how CVD SiC coating enhances performance in high-temperature and vacuum environments.
Verwandte Produktmerkmale:
Ultra-high purity SiC coating via CVD for superior performance in semiconductor applications.
Excellent thermal shock resistance ensures durability in high-temperature environments.
Exceptional wear resistance for prolonged service life in demanding conditions.
High physical impact resistance for reliable use in industrial settings.
Machinable for complex shapes to meet specific application requirements.
Excellent chemical stability for use in oxidizing atmospheres.
Ideal for ICP etching and MOCVD susceptor applications in the semiconductor industry.
Polished to a mirror-like finish for ultra-clean and precise operations.
FAQ:
What is the primary use of Silicon Carbide Trays?
Silicon Carbide Trays are primarily used in ICP etching and MOCVD systems as susceptors for holding and processing semiconductor wafers, ensuring high purity and wear resistance.
How is the SiC coating applied to the graphite trays?
The SiC coating is applied via chemical vapor deposition (CVD), ensuring high purity, theoretical density, and excellent wear resistance for semiconductor applications.
What are the key advantages of using these trays in semiconductor manufacturing?
Key advantages include ultra-high purity, excellent thermal and physical impact resistance, machinability for complex shapes, and superior chemical stability, making them ideal for high-temperature and vacuum environments.