4H-SiC-Epitaxialwafer für Ultra-Hochspannungs-MOSFETs (100 ‰ 500 μm, 6 Zoll)

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September 02, 2025
Kategorieverbindung: Silikon-Karbid-Oblate
Kurzfassung: Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.
Verwandte Produktmerkmale:
  • Ultra-high voltage capability with thick epitaxial layers (100-500 μm) for kV-class breakdown voltages.
  • Outstanding crystal quality with low defect density, ensuring device reliability.
  • 6-inch wafers support high-volume manufacturing and reduce cost per device.
  • Superior thermal properties for efficient operation under high power and temperature conditions.
  • Customizable thickness, doping concentration, and surface finish for specific MOSFET designs.
  • Produced using state-of-the-art Chemical Vapor Deposition (CVD) epitaxial growth technology.
  • Uniform doping and smooth surfaces with thickness control up to 500 μm.
  • Ideal for electric vehicle traction inverters, smart grid systems, and renewable energy applications.
FAQ:
  • What is the conductivity type of your SiC epitaxial wafers?
    Our wafers are N-type, doped with nitrogen, which is the standard choice for MOSFET and other power device applications.
  • What thicknesses are available for the epitaxial layer?
    We provide 100-500 μm epitaxial thickness, with standard offerings at 100 μm, 200 μm, and 300 μm. Custom thicknesses can also be produced upon request.
  • What is the crystal orientation and off-axis angle?
    The wafers are oriented on the (0001) Si-face, with an off-axis angle of 4° ± 0.5°, typically toward the [11-20] direction.