Name: 4H-SiC-Epitaxialwafer für Ultra-Hochspannungs-MOSFETs (100 ‰ 500 μm, 6 Zoll)
Uploaded: 2026-03-09CDT00:47:59-05:00
Duration: 4 s
Description: Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

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4H-SiC-Epitaxialwafer für Ultra-Hochspannungs-MOSFETs (100 ‰ 500 μm, 6 Zoll)

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September 02, 2025

Stichwort: Silikon-Karbid-Oblate

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#Silikonkarbidsubstrat #sic Oblate #Silikon auf Saphiroblaten

Videobeschreibung:

Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

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