4H-SiC-Epitaxialwafer für Ultra-Hochspannungs-MOSFETs (100 ‰ 500 μm, 6 Zoll)

Plaudern Kontaktieren Sie uns

4H-SiC-Epitaxialwafer für Ultra-Hochspannungs-MOSFETs (100 ‰ 500 μm, 6 Zoll)

Andere Videos

September 02, 2025

Kategorieverbindung: Silikon-Karbid-Oblate

Plaudern Kontaktieren Sie uns

Tags:

#Silikonkarbidsubstrat #sic Oblate #Silikon auf Saphiroblaten

Kurzfassung: Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

Verwandte Produktmerkmale:

Ultra-high voltage capability with thick epitaxial layers (100-500 μm) for kV-class breakdown voltages.
Outstanding crystal quality with low defect density, ensuring device reliability.
6-inch wafers support high-volume manufacturing and reduce cost per device.
Superior thermal properties for efficient operation under high power and temperature conditions.
Customizable thickness, doping concentration, and surface finish for specific MOSFET designs.
Produced using state-of-the-art Chemical Vapor Deposition (CVD) epitaxial growth technology.
Uniform doping and smooth surfaces with thickness control up to 500 μm.
Ideal for electric vehicle traction inverters, smart grid systems, and renewable energy applications.

FAQ:

What is the conductivity type of your SiC epitaxial wafers?

Our wafers are N-type, doped with nitrogen, which is the standard choice for MOSFET and other power device applications.
What thicknesses are available for the epitaxial layer?

We provide 100-500 μm epitaxial thickness, with standard offerings at 100 μm, 200 μm, and 300 μm. Custom thicknesses can also be produced upon request.
What is the crystal orientation and off-axis angle?

The wafers are oriented on the (0001) Si-face, with an off-axis angle of 4° ± 0.5°, typically toward the [11-20] direction.