Name: 4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade
Brand: SHANGHAI FAMOUS TRADE CO.,LTD
SKU: 3C-N SiC-Wafer
Price: 1,300.00 USD
Availability: InStock

Markenbezeichnung:	ZMSH
Modellnummer:	3C-N SiC-Wafer
MOQ:	10pieces
Verpackungsdetails:	Mehrfachwafer-Kassette oder Einfachwaferbehälter
Zahlungsbedingungen:	T/t

Ausführliche Information

Produkt-Beschreibung

Ausführliche Information

Herkunftsort:

CHINA

Zertifizierung:

RoHS

Durchmesser:

4 Zoll, 99,5 mm ~ 100,0 mm

Dicke:

350 μm±25 μm

Typ:

3C-N SiC-Wafer

Rauheit:

Polnisch Ra≤1 nm

Kette:

≤40 μm

Grad:

MPD oder Dummy Grade

Hervorheben:

3C-SiC silicon carbide wafers

4 inch silicon carbide wafer

MPD grade SiC wafers

Produkt-Beschreibung

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

Product Overview

The 4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers offer superior performance characteristics for advanced semiconductor applications.

Introduction of 3C SiC Wafer

Cubic silicon carbide (3C-SiC) exhibits better carrier mobility, thermal conductivity, and mechanical properties compared to 4H-SiC. With lower defect density at the oxide gate interface, 3C-SiC enables manufacturing of high-voltage, reliable, and long-life devices. While typically prepared on Si substrates, bulk 3C-SiC wafers present a cost-effective solution for power devices in the 600V-1200V range.

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade 0

Advantages of 3C-N SiC Wafer

Excellent Electrical Properties: Moderate bandgap (~2.36 eV) enables high breakdown voltage and low leakage current. High electron mobility allows faster switching speeds and lower conduction losses.
Superior Thermal Performance: High thermal conductivity (~3.2 W/cm*K) ensures efficient heat dissipation. Maintains stability at temperatures exceeding 350°C.
Mechanical Robustness: High hardness and chemical stability make it suitable for harsh environments.

Specifications

Parameter	Zero MPD	Standard Production (P Grade)	Dummy Grade (D Grade)
Diameter	99.5 mm~100.0 mm
Thickness (4H-N)	350 μm±15 μm	350 μm±25 μm	-
Thickness (4H-SI)	500 μm±15 μm	500 μm±25 μm	-
Wafer Orientation	Off axis: 4.0° toward <1120> ±0.5° for 4H-N On axis: <0001>±0.5° for 4H-SI
Micropipe Density (4H-N)	≤0.2 cm-2	≤2 cm-2	≤15 cm-2
Micropipe Density (4H-SI)	≤1 cm-2	≤5 cm-2	≤15 cm-2
Resistivity (4H-N)	0.015~0.024 Ω*cm	0.015~0.028 Ω*cm	-
Resistivity (4H-SI)	≥1E10 Ω*cm	≥1E5 Ω*cm	-
Primary Flat Orientation	{10-10} ±5.0°
Primary Flat Length	32.5 mm ± 2.0 mm
Secondary Flat Length	18.0 mm ± 2.0 mm
Edge Exclusion	3 mm
LTV/TTV/Bow/Warp	≤2.5 μm/≤5 μm/≤15 μm/≤30 μm	≤10 μm/≤15 μm/≤25 μm/≤40 μm	-

Material Comparison

4H-SiC: High electron mobility and low conduction resistance make it ideal for power electronic devices.
6H-SiC: Stable structure and excellent luminescence performance suit optoelectronic applications.
3C-SiC: High saturation electron velocity and exceptional thermal conductivity make it perfect for high-frequency and high-power devices.

Frequently Asked Questions

What is a SiC wafer?

A SiC wafer is a single-crystal substrate made from silicon and carbon atoms. As a wide-bandgap semiconductor material, it's used in next-generation power electronics, RF devices, and high-temperature applications. Its superior properties enable smaller, faster, and more energy-efficient electronic devices for electric vehicles, renewable energy systems, and advanced communication technologies.

What is the full form of 3C-SiC?

3C-SiC (Cubic Silicon Carbide) is a cubic crystal form of silicon carbide characterized by high electron mobility, excellent thermal stability, and compatibility with silicon substrates. It's widely used for high-speed, low-power, and cost-effective semiconductor devices.

Which is better, SiC or GaN?

SiC (Silicon Carbide) excels in high-power, high-voltage, high-temperature applications such as electric vehicles and renewable energy systems. GaN (Gallium Nitride) performs better in high-frequency, low-to-medium voltage applications like fast chargers and 5G systems.

Tags:

Saphirsubstrat

Saphir optisches Windows

Silikon-Karbid-Oblate

Sapphire Tube

Halbleiter-Substrat

Synthetischer Gem Stone

Teile aus Keramik

Gallium-Nitrid-Oblate

wissenschaftliche Laborausrüstung

Saphir-Kristall-Uhrgehäuse

Oblaten-Fördermaschinen-Kasten

Supraleitendes dünnes monokristallines Substrat